PLASMA ANODIZATION OF METALS AND SEMICONDUCTORS

被引:46
作者
OHANLON, JF
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1970年 / 7卷 / 02期
关键词
D O I
10.1116/1.1315852
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:330 / &
相关论文
共 42 条
[1]  
Brown S B, 1959, BASIC DATA PLASMA PH, P275
[2]  
COBINE JD, 1968, GASEOUS CONDUCTORS, P134
[3]  
COBINE JD, 1968, GASEOUS CONDUCTORS, P214
[5]  
FOPIANO PJ, 1965, IEEE T PARTS MATERIA, VPMP1, pS217
[6]  
FRANCIS A, 1956, HANDBUCH PHYSIK, V22, P53
[7]   DIRECT NITRIDATION OF SILICON SUBSTRATES [J].
FRIESER, RG .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (10) :1092-&
[8]   HOT-ELECTRON TRANSPORT IN AL-AL2O3 TRIODES PRODUCED BY PLASMA OXIDATION [J].
HUBER, EE ;
JOHNSTON, FL ;
KIRK, CT .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (11) :5104-&
[9]   GAS PHASE ANODIZATION OF TANTALUM [J].
JENNINGS, TA ;
MCNEILL, W ;
SALOMON, RE .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (11) :1134-&
[10]   SPUTTERING DUE TO NEGATIVE OXYGEN IONS IN OXYGEN DISCHARGES [J].
JENNINGS, TA ;
MCNEILL, W .
APPLIED PHYSICS LETTERS, 1968, 12 (02) :25-&