FORMATION OF OHMIC CONTACTS ON SEMICONDUCTING DIAMOND GROWN BY CHEMICAL-VAPOR-DEPOSITION

被引：7

作者：

IWASAKI, T

OKANO, K

MATSUMAE, Y

MATSUSHIMA, E

MAEKAWA, H

KIYOTA, H

KUROSU, T

IIDA, M

机构：

[1] Department of Electronics, School of Engineering, Tokai University, Hiratsuka, Kanagawa, 259-12

来源：

关键词：

D O I：

10.1016/0925-9635(94)90026-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The current-voltage (I-V) characteristics and the contact resistance R(e) of Au/, Al/ and Mg/chemically vapour deposited semiconducting diamond contacts were measured. The I-V characteristics of Al/ and Mg/p-diamond contacts changed their properties from an ohmic to a rectifying nature as the resistivity of the semiconducting diamonds increased, while the Au/p-diamond contact was ohmic. An R(c) of less than 10(3) Omega cm(2) is found to be necessary to obtain the ohmic contacts on semiconducting diamonds regardless of the metal. The rough estimate of the barrier height phi(B), was also discussed using the results of the R(c) measurement.

引用

页码：30 / 34

页数：5

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[2]

BETHE HA, 1942, MIT4312 RAD LAB

[3]

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