共 50 条
- [31] RADIATIVE RECOMBINATION IN GASB P-N JUNCTIONS PRODUCED BY PULLING FROM MELT SOVIET PHYSICS SOLID STATE,USSR, 1967, 8 (08): : 1859 - +
- [32] QUANTUM EFFICIENCY OF RADIATIVE RECOMBINATION IN P-N JUNCTIONS MADE OF GALLIUM ANTIMONIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (08): : 1343 - &
- [34] SPONTANEOUS RADIATIVE RECOMBINATION IN INP P-N JUNCTIONS IN CASE OF SMALL CURRENTS SOVIET PHYSICS SOLID STATE,USSR, 1967, 8 (11): : 2703 - +
- [36] POLARIZATION OF RECOMBINATION RADIATION EMITTED BY HEAVILY DOPED P-N JUNCTIONS IN GAAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (09): : 1563 - &
- [38] THE INFLUENCE OF SURFACE RECOMBINATION ON THE EFFICIENCY OF A PHOTOCELL WITH A P-N TRANSITION REGION SOVIET PHYSICS-TECHNICAL PHYSICS, 1957, 2 (03): : 419 - 423
- [39] REVERSE BRANCH OF CURRENT-VOLTAGE CHARACTERISTIC AND BREAKDOWN OF P-N STRUCTURES IN CASE OF PARTIAL IONIZATION OF IMPURITY CENTERS (ILLUSTRATED BY SI-DOPED GAAS P-N STRUCTURES) SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (02): : 293 - &
- [40] AUGER EFFECT AND RADIATIVE RECOMBINATION IN N-GAAS-P-ALGAAS HETEROJUNCTIONS REVUE ROUMAINE DE PHYSIQUE, 1971, 16 (09): : 969 - +