共 50 条
- [1] INFLUENCE OF ISOVALENT INDIUM IMPURITIES ON RADIATIVE RECOMBINATION IN P-N GAAS-SI STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (09): : 1016 - 1019
- [2] RADIATIVE RECOMBINATION IN GAAS P-N JUNCTIONS FORMED BY BERYLLIUM DIFFUSION SOVIET PHYSICS-SOLID STATE, 1964, 6 (06): : 1496 - 1497
- [3] MECHANISM OF RADIATIVE RECOMBINATION IN P-N JUNCTIONS IN HEAVILY DOPED GAAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (12): : 1928 - &
- [5] RADIATIVE RECOMBINATION IN GAAS P-N JUNCTIONS FORMED BY BERYLLIUM DIFFUSION SOVIET PHYSICS SOLID STATE,USSR, 1964, 6 (06): : 1496 - +
- [6] RADIATIVE RECOMBINATION IN P-N HETEROJUNCTIONS REVUE ROUMAINE DE PHYSIQUE, 1969, 14 (05): : 481 - +
- [8] RADIATIVE RECOMBINATION IN SILICON P-N JUNCTIONS PHYSICA STATUS SOLIDI, 1969, 36 (01): : 311 - +
- [9] EFFECT OF TEMPERATURE ON SPONTANEOUS RADIATIVE RECOMBINATION EMISSION FROM GAAS P-N JUNCTIONS BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1968, 13 (12): : 1720 - &
- [10] EFFECT OF GROWING CONDITIONS ON THE DISTRIBUTION OF RECOMBINATION PARAMETERS OVER THE AREA OF THE p-n STRUCTURES OF GaAs:Si. Soviet Microelectronics (English Translation of Mikroelektronika), 1979, 8 (02): : 128 - 132