NOVEL 1.3-MU-M MQW LIGHT-EMISSION-AND-DETECTION DIODE WITH FLAT RESPONSIVITY CHARACTERISTICS

被引：9
|
作者：
SUZAKI, Y
TOHMORI, Y
MATSUMOTO, S
KISHI, K
YAMAMOTO, M
机构：
[1] NTT Opto-electronics Laboratories, Atsugi-shi, Kanagawa, 243-01, 3-1 Wakamiya, Morinosato
来源：
ELECTRONICS LETTERS | 1995年 / 31卷 / 16期
关键词：
LIGHT EMITTING DIODES; PHOTODIODES;
D O I：
10.1049/el:19950926
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel 1.3 mu m MQW light-emission-and-derection diode including a bulk detection layer is proposed for use in time-compression-multiplexing transmission systems. In the lasing mode. this diode has a threshold current of 9mA at 25 degrees C and a maximum output power of > 10 mW at 85 degrees C. In the detection mode: the polarisation dependence of its responsivity, as a detection operation: is < 0.5 dB and the wavelength dependence of the responsivity is only 1 dB at a wavelength 35nm longer than the lasing wavelength.
引用
收藏
页码：1388 / 1389
页数：2
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