POSITRON-ANNIHILATION INVESTIGATION OF DEFECTS IN SILICON SINGLE-CRYSTALS IRRADIATED WITH XENON IONS

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作者：
GIRKA, AI
KLOPIKOV, EB
SKURATOV, VA
SHISHKIN, AV
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来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1989年 / 23卷 / 02期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：202 / 205
页数：4
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