HIGH-PERFORMANCE SUBMICROMETER ALINAS-GAINAS HEMTS

被引：85
作者：
MISHRA, UK
BROWN, AS
JELLOIAN, LM
HACKETT, LH
DELANEY, MJ
机构：
[1] Hughes Research Lab, Malibu, CA, USA, Hughes Research Lab, Malibu, CA, USA
来源：
IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 01期
关键词：
SEMICONDUCTING ALUMINUM COMPOUNDS - SEMICONDUCTING GALLIUM ARSENIDE - SEMICONDUCTING INDIUM COMPOUNDS;
D O I：
10.1109/55.20407
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The performance of long (1. 3- mu m) and short (0. 3- mu m) gate-length Al//0//. //4//8In//0//. //5//2 As-Ga//0//. //4//7In//0//. //5//3 high-electron-mobility transistors (HEMTs) is reported. Transconductances of 465 and 650 mS/mm, respectively, were achieved. The 0. 3- mu m-long gate-length device exhibited an f//t greater than 80 GHz. These results are attributed to the excellent electronic properties of the AlInAs-GaInAs modulation-doped system.
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页码：41 / 43
页数：3
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