THE PHOTOELECTROCHEMICAL BEHAVIOR OF POLYCRYSTALLINE AGIN5SE8

被引:12
作者
RAZZINI, G [1 ]
BICELLI, LP [1 ]
ARFELLI, M [1 ]
SCROSATI, B [1 ]
机构
[1] UNIV ROME LA SAPIENZA,DEPT CHEM,I-00185 ROME,ITALY
关键词
D O I
10.1016/0013-4686(86)80150-5
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
PHOTOELECTRIC CELLS
引用
收藏
页码:1293 / 1298
页数:6
相关论文
共 25 条
[1]   OPTICAL GAP AND ITS LOW-TEMPERATURE DEPENDENCE IN AGIN5SE8 [J].
BENOIT, P ;
DJEGAMARIADASSOU, C ;
LESUEUR, R ;
ALBANY, JH .
PHYSICS LETTERS A, 1979, 73 (01) :55-57
[2]   COMPOUNDS DEFINED IN THE AG-IN-SE - CRYSTALLINE-STRUCTURE OF CLASS-2AGIN5SE8 [J].
BENOIT, P ;
CHARPIN, P ;
DJEGAMARIADASSOU, C .
MATERIALS RESEARCH BULLETIN, 1983, 18 (09) :1047-1057
[3]   PHOTOELECTROLYSIS AND PHYSICAL-PROPERTIES OF SEMICONDUCTING ELECTRODE WO3 [J].
BUTLER, MA .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (05) :1914-1920
[4]   PREDICTION OF FLATBAND POTENTIALS AT SEMICONDUCTOR-ELECTROLYTE INTERFACES FROM ATOMIC ELECTRONEGATIVITIES [J].
BUTLER, MA ;
GINLEY, DS .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (02) :228-232
[5]  
ELGVIBALY F, 1982, J APPL PHYS, V53, P1737
[6]   DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS [J].
GARTNER, WW .
PHYSICAL REVIEW, 1959, 116 (01) :84-87
[7]   ELECTROCHEMISTRY OF N-TYPE MOSE2 - A COMPARISON OF PHOTOCORROSION AND DISSOLUTION UNDER HIGH ANODIC BIAS [J].
GERISCHER, H ;
ROSS, D ;
LUBKE, M .
ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-WIESBADEN, 1984, 139 :1-9
[8]   UNTERSUCHUNGEN UBER TERNARE CHALKOGENIDE .5. UBER EINIGE TERNARE CHALKOGENIDE MIT CHALKOPYRITSTRUKTUR [J].
HAHN, H ;
FRANK, G ;
KLINGLER, W ;
MEYER, AD ;
STORGER, G .
ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1953, 271 (3-4) :153-170
[9]   PHOTOOXIDATION OF WATER AT BARIUM-TITANATE ELECTRODES [J].
KENNEDY, JH ;
FRESE, KW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (11) :1683-1686
[10]  
KOVACH SG, 1983, SOV ELECTROCHEM, V19, P252