共 50 条
- [1] RADIATIVE RECOMBINATION IN HEAVILY DOPED GERMANIUM SUBJECTED TO UNIAXIAL COMPRESSION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (10): : 1225 - +
- [2] INFLUENCE OF UNIAXIAL COMPRESSION ON RADIATIVE RECOMBINATION IN GERMANIUM SOVIET PHYSICS SOLID STATE,USSR, 1967, 8 (11): : 2544 - &
- [3] INFLUENCE OF UNIAXIAL COMPRESSION ON INTERIMPURITY RADIATIVE RECOMBINATION IN GERMANIUM SOVIET PHYSICS SOLID STATE,USSR, 1967, 9 (05): : 1131 - +
- [4] RADIATIVE RECOMBINATION IN HEAVILY DOPED P-TYPE GERMANIUM PHYSICAL REVIEW B, 1984, 30 (12): : 7030 - 7036
- [5] RADIATIVE RECOMBINATION IN HEAVILY DOPED AND GERMANIUM-COMPENSATED GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (05): : 575 - 576
- [6] RECOMBINATION RADIATION OF HEAVILY DOPED GERMANIUM SOVIET PHYSICS SOLID STATE,USSR, 1966, 8 (03): : 691 - +
- [7] AUGER RECOMBINATION IN HEAVILY DOPED GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (05): : 518 - 521
- [8] RECOMBINATION RADIATION OF HEAVILY DOPED GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (04): : 476 - +
- [9] RADIATIVE RECOMBINATION IN HIGHLY DOPED GERMANIUM PHYSICA STATUS SOLIDI, 1969, 35 (02): : 599 - +
- [10] INTERIMPURITY RADIATIVE RECOMBINATION IN HEAVILY DOPED SEMICONDUCTORS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (07): : 752 - 759