STREAK PATTERNS IN LOW-ENERGY-ELECTRON DIFFRACTION ON SI(001)

被引:70
作者
KUBOTA, M [1 ]
MURATA, Y [1 ]
机构
[1] UNIV TOKYO,INST SOLID STATE PHYS,7-22-1 ROPPONGI,MINATO KU,TOKYO 106,JAPAN
来源
PHYSICAL REVIEW B | 1994年 / 49卷 / 07期
关键词
D O I
10.1103/PhysRevB.49.4810
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The phase transition of Si(001) has been studied by investigating the temperature dependence of streak patterns in low-energy electron diffraction above the transition temperature. The streak pattern remains up to well above the transition temperature of c(4 x 2) to 2 x 1. The temperature dependence of the width and the length of the streak cannot be described by a simple two-dimensional Ising system. The result is discussed in terms of effects of a strong anisotropic coupling between adjacent asymmetric dimers, dimer vacancies, and a small amount of the p(2 x 2) configuration.
引用
收藏
页码:4810 / 4814
页数:5
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