HOT CARRIERS EFFECTS IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS

被引：6

作者：

MARIUCCI, L

PECORA, A

FORTUNATO, G

REITA, C

MIGLIORATO, P

机构：

[1] IESS-CNR, 00156 Roma

[2] GEC-Marconi, Hirst Research Centre, Wembley, Middlesex, East Lane

[3] Dep. of Engineering, University of Cambridge, Cambridge, Trumpington Street

来源：

MICROELECTRONIC ENGINEERING | 1992年 / 19卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(92)90403-E

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The application of bias-stress with high source-drain voltage and negative gate voltage (transistor in off-status) produces a marked reduction in the off-current as well as a transconductance degradation. These effects have been explained in terms of hot-holes injection into the gate insulator and formation of interface states near the drain.

引用

页码：109 / 114

页数：6

共 6 条

[1]

Fortunato, Et al., Philos. Mag. B, 57, (1988)

[2]

Rodder, IEEE Electron Devices Lett., 11, (1990)

[3]

Hofmann, Et al., Hot-electron and hole-emission effects in short n-channel MOSFET's, IEEE Transactions on Electron Devices, 32 ED, (1985)

[4]

Schwerin, Et al., The relationship between Oxide charge and device degradation: A comparative study of n- and p- channel MOSFET's, IEEE Transactions on Electron Devices, 34 ED, (1987)

[5]

Lai, Appl. Phys. Lett., 39, (1981)

[6]

Ma, Scoggan, Leone, Appl. Phys. Lett., 27, (1975)

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