Electron mobility in II-VI semiconductors

被引：174
|
作者：
Rode, D. L. [1 ]
机构：
[1] Bell Tel Labs, Murray Hill, NJ 07974 USA
来源：
PHYSICAL REVIEW B-SOLID STATE | 1970年 / 2卷 / 10期
关键词：
D O I：
10.1103/PhysRevB.2.4036
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The electron drift mobility in CdS, CdSe, CdTe, ZnS, ZnSe, and ZnTe is calculated by an iterative solution of the Boltzmann equation for lattice scattering. Piezoelectric, deformation-potential acoustic-mode, and polar-mode scattering are included. The acoustic deformation potential appropriate to acoustic-mode scattering appears to be much higher than previously expected.
引用
收藏
页码：4036 / 4044
页数：9
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