TRANSMISSION ELECTRON-MICROSCOPIC STUDY OF THE ORDERED STRUCTURE IN GAINP/GAAS EPITAXIALLY GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：58
作者：
MORITA, E
IKEDA, M
KUMAGAI, O
KANEKO, K
机构：
来源：
APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 22期
关键词：
D O I：
10.1063/1.100287
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：2164 / 2166
页数：3
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[2]   EVIDENCE FOR THE EXISTENCE OF AN ORDERED STATE IN GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY AND ITS RELATION TO BAND-GAP ENERGY [J].
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[3]   ORDERED STRUCTURE IN OMVPE-GROWN GA0.5IN0.5P [J].
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JOURNAL OF CRYSTAL GROWTH, 1988, 88 (02) :291-296
[4]   ATOMIC-STRUCTURE OF ORDERED INGAP CRYSTALS GROWN ON (001)GAAS SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
UEDA, O ;
TAKIKAWA, M ;
KOMENO, J ;
UMEBU, I .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (11) :L1824-L1827
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