ELECTRON REFLECTANCE OF MULTIQUANTUM BARRIER (MQB)

被引：156

作者：

IGA, K

UENOHARA, H

KOYAMA, F

机构：

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 19期

关键词：

D O I：

10.1049/el:19860689

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1008 / 1010

页数：3

共 9 条

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[7] EXPERIMENTAL-DETERMINATION OF THE EFFECTIVE MASSES FOR GAXIN1-XASYP1-Y ALLOYS GROWN ON INP [J].

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[8]

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[9] TUNNELING IN A FINITE SUPERLATTICE [J].

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