A NEW METHOD FOR THE TWO-DIMENSIONAL CALCULATION OF THE POTENTIAL DISTRIBUTION IN A BURIED-CHANNEL CHARGE-COUPLED DEVICE - THEORY AND EXPERIMENTAL-VERIFICATION

被引：3

作者：

DEMEYER, KM ^{[1
]}

DECLERCK, GJ ^{[1
]}

机构：

[1] CATHOLIC UNIV LEUVEN,DEPT ELEKTROTECH,AFD ESAT,B-3030 HEVERLE,BELGIUM

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 03期

关键词：

D O I：

10.1109/T-ED.1981.20334

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：313 / 321

页数：9

共 26 条

[1] A NEW METHOD BASED ON THE SUPERPOSITION PRINCIPLE FOR THE CALCULATION OF THE TWO-DIMENSIONAL POTENTIAL IN A BURIED-CHANNEL CHARGE-COUPLED DEVICE
LESTER, TP
PULFREY, DL
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (07) : 999 - 1001
[2] NEW METHOD BASED ON THE SUPERPOSITION PRINCIPLE FOR THE CALCULATION OF THE TWO-DIMENSIONAL POTENTIAL IN A BURIED-CHANNEL CHARGE-COUPLED DEVICE.
Lester, T.P.
Pulfrey, D.P.
IEEE Transactions on Electron Devices, 1984, ED-31 (07) : 999 - 1001
[3] TWO-DIMENSIONAL TRANSIENT ANALYSIS OF A BURIED-CHANNEL CHARGE-COUPLED DEVICE
HSIEH, HC
LUK, TW
SOLID-STATE ELECTRONICS, 1984, 27 (03) : 213 - 224
[4] DESIGNING OF A BURIED-CHANNEL CHARGE-COUPLED DEVICE
TANIKAWA, K
SHIMOHASHI, A
ARAKAWA, I
OHTSUKI, O
JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (05) : 909 - 910
[5] OPERATIONAL MODE IN A BURIED-CHANNEL CHARGE-COUPLED DEVICE
TANIKAWA, K
SHIMOHASHI, A
TOKUHIRA, S
OHTSUKI, O
JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (10) : 1629 - 1630
[6] CHARGE-DISTRIBUTION IN BURIED-CHANNEL CHARGE-COUPLED DEVICES
KENT, WH
BELL SYSTEM TECHNICAL JOURNAL, 1973, 52 (06): : 1009 - 1023
[7] APPROXIMATE 2-DIMENSIONAL TRANSIENT ANALYSIS OF CHARGE TRANSPORT IN A BURIED-CHANNEL CHARGE-COUPLED DEVICE
FERGUSON, RS
RYAN, WD
REVUE DE PHYSIQUE APPLIQUEE, 1978, 13 (12): : 683 - 690
[8] Experimental demonstration of a buried-channel charge-coupled device in 6H silicon carbide
Sheppard, ST
Melloch, MR
Cooper, JA
IEEE ELECTRON DEVICE LETTERS, 1996, 17 (01) : 4 - 6
[9] DESIGN CONSIDERATIONS FOR A 2-PHASE, BURIED-CHANNEL, CHARGE-COUPLED DEVICE
MCKENNA, J
SCHRYER, NL
WALDEN, RH
BELL SYSTEM TECHNICAL JOURNAL, 1974, 53 (08): : 1581 - 1597
[10] A BURIED-CHANNEL CHARGE-COUPLED DEVICE WITH NONOVERLAPPING GATE STRUCTURE FOR A CMOS BCCD PROCESS
WARMERDAM, L
WALLINGA, H
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (05) : 658 - 663

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