MEV ION-BEAM INDUCED CRYSTALLIZATION IN HIGH-ENERGY AS+ ION-IMPLANTED SILICON

被引：0
|
作者：
WANG, ZL [1 ]
ZHANG, BX [1 ]
机构：
[1] BEIJING NORMAL UNIV,INST LOW ENERGY NUCL PHYS,BEIJING 100875,PEOPLES R CHINA
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 59卷
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中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
MeV ion-beam induced crystallization (IBIC) and amorphization of silicon have been investigated. Various damage morphologies produced in Si (100) by 1 and 1.5 MeV As+ with different fluences from 4 x 10(13) cm-2 to 5 x 10(14) cm-2 were annealed by 1.6 MeV Si+ ion bombardment at 300-degrees-C. After ion-beam induced crystallization, the predamaged layers, either lightly disordered or amorphous, were recrystallized well and no pronounced secondary defects in the As+ implanted region were observed according to the channeling measurements and XTEM analysis. The annealing dose dependence of crystallization behavior has been studied. Appropriately controlling the dose and dose rate of the annealing beam during IBIC, the added damage produced by the annealing beam will be reduced.
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页码：439 / 443
页数：5
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