STRUCTURE AND STABILITY OF LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED SILICON FILMS

被引：171

作者：

KAMINS, TI ^{[1
]}

MANDURAH, MM ^{[1
]}

SARASWAT, KC ^{[1
]}

机构：

[1] STANFORD UNIV,INTEGRATED CIRCUITS LABS,STANFORD,CA 94305

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 06期

关键词：

D O I：

10.1149/1.2131593

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：927 / 932

页数：6

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[9] DEFORMATION OCCURRING DURING DEPOSITION OF POLYCRYSTALLINE-SILICON FILMS [J].

KAMINS, TI .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (05) :681-684

[10] STRUCTURE OF CHEMICALLY DEPOSITED POLYCRYSTALLINE-SILICON FILMS [J].

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CASS, TR .

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