ALN THIN-FILMS WITH CONTROLLED CRYSTALLOGRAPHIC ORIENTATIONS AND THEIR MICROSTRUCTURE

被引：80

作者：

OHUCHI, FS ^{[1
]}

RUSSELL, PE ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.574579

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1630 / 1634

页数：5

共 23 条

[1] BASAL ORIENTATION ALUMINUM NITRIDE GROWN AT LOW-TEMPERATURE BY RF DIODE SPUTTERING [J].

AITA, CR .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) :1807-1808

[2]

Belyi I. M., 1979, Soviet Physics - Crystallography, V24, P233

[3] EVAPORATED ALUMINUM NITRIDE ENCAPSULATING FILMS [J].

BENSALEM, R ;

ABID, A ;

SEALY, BJ .

THIN SOLID FILMS, 1986, 143 (02) :141-153

[4] ION-BEAM-SPUTTERED ALOXNY ENCAPSULATING FILMS [J].

BIREY, H ;

PAK, SJ ;

SITES, JR ;

WAGER, JF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :2086-2089

[5] REACTIVELY SPUTTERED AIN FILMS FOR GAAS ANNEALING CAPS [J].

ESTE, G ;

SURRIDGE, R ;

WESTWOOD, WD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :989-992

[6]

FATHIMULLA A, 1983, J APPL PHYS, V54, P4586, DOI 10.1063/1.332661

[7] PROTECTION OF GASAS, GAALAS AND GAASP BY ALUMINUM NITRIDE DEPOSITED BY REACTIVE SPUTTERING [J].

FAVENNEC, PN ;

HENRY, L ;

JANICKI, T ;

SALVI, M .

THIN SOLID FILMS, 1977, 47 (03) :327-333

[8] QUANTITATIVE ION-BEAM PROCESS FOR THE DEPOSITION OF COMPOUND THIN-FILMS [J].

HARPER, JME ;

CUOMO, JJ ;

HENTZELL, HTG .

APPLIED PHYSICS LETTERS, 1983, 43 (06) :547-549

[9]

IWASI N, 1986, SOLID STATE TECH OCT, P135

[10] RF-MAGNETRON-SPUTTERED A1N FILMS FOR MICROWAVE ACOUSTIC RESONATORS [J].

KRISHNASWAMY, SV ;

HESTER, WA ;

SZEDON, JR ;

FRANCOMBE, MH ;

DRISCOLL, MM .

THIN SOLID FILMS, 1985, 125 (3-4) :291-298

← 1 2 3 →