A 5-10 GHZ 15-W GAAS-MESFET AMPLIFIER WITH FLAT GAIN AND POWER RESPONSES

被引：4

作者：

ITOH, Y

MOCHIZUKI, M

KOHNO, M

MASUNO, H

TAKAGI, T

MITSUI, Y

机构：

[1] Electro-Optics and Microwave Systems Laboratory, Mitsubishi Electric Corporation

[2] Communication Equipment Works, Mitsubishi Electric Corporation

[3] Kitaitami Works, Mitsubishi Electric Corporation

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1995年 / 5卷 / 12期

关键词：

D O I：

10.1109/75.481859

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 5-10 GHz 15-W GaAs MESFET amplifier has been developed, It utilizes a multisection maximally flat impedance transformer whose length is designed to become a quarter wavelength at the highest frequency of the design band to achieve hat gain and flat power responses over a wide bandwidth, With the use of this transformer, the amplifier has achieved a linear gain of 9 +/- 1 dB, a P1 dB of 41.8 +/- 1 dBm, and a power-added efficiency of 27.5 +/- 7.5% over 5-10 GHz, which demonstrate the highest power-bandwidth product ever achieved by high-power amplifiers using GaAs MESFET's, PHEMT's or HBT's.

引用

页码：454 / 456

页数：3

共 7 条

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[4] Ikeda Y., Takagi T., Hirose H., Urasaki S., C-band high efficiency GaAs FET amplifier with 17.4 W output power, Proc. 20th European Microwave Conf., pp. 307-309, (1990)
[5] Tsuji S., Seino K., Sakamoto S., Sakayori T., Takagi T., Yamanouchi M., Takamiya S., Kashimoto Y., 13 watts power GaAs FET for 14.0-14.5 GHz band, Proc. 3rd Asia-Pacific Microwave Conf., pp. 537-539, (1990)
[6] Curtice W.R., Ettenberg M., A nonlinear GaAs FET model for use in the design of output circuits for power amplifiers, IEEE Trans. Microwave Theory Tech., MTT-33, 12, pp. 1383-1394, (1985)
[7] Mochizuki M., Itoh Y., Kohno M., Masuno H., Takagi T., C-X band 14 W power amplifier having flat gain and power response, 1993 IEEE MTT-S Int. Microwave Symp. Dig., pp. 1365-1368, (1993)

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