RADIATION SUSCEPTIBILITY OF A NON-RADIATION-HARD 1.2 MU-M CMOS TRANSISTORS

被引：5

作者：

MATSUSHITA, T

FUKUNAGA, C

IKEDA, H

SAITOH, Y

机构：

[1] NATL LAB HIGH ENERGY PHYS,1-1 OHO,TSUKUBA,IBARAKI 305,JAPAN

[2] TOKYO METROPOLITAN UNIV,TOKYO 19203,JAPAN

[3] SEIKO INSTRUMENTS INC,TAKATSUKA UNIT,MATSUDO,CHIBA 271,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1994年 / 350卷 / 1-2期

关键词：

D O I：

10.1016/0168-9002(94)91164-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The radiation susceptibility of CMOS transistors made by a non-radiation-hard process was studied in terms of the threshold voltage shift, degradation of the process gain factor, increase in the 1/f noise, and their impact on signal processing.

引用

页码：199 / 203

页数：5

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