SELF-ALIGNED MOLYBDENUM GATE MOS-FETS

被引：0
|
作者：
SINGH, A
机构：
来源：
INDIAN JOURNAL OF PURE & APPLIED PHYSICS | 1981年 / 19卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：707 / 710
页数：4
相关论文
共 50 条
  • [21] SILICON-OXIDE ENHANCED SCHOTTKY GATE IN0.53GA0.47AS FETS WITH A SELF-ALIGNED RECESSED GATE STRUCTURE
    CHENG, CL
    LIAO, ASH
    CHANG, TY
    CARIDI, EA
    COLDREN, LA
    LALEVIC, B
    IEEE ELECTRON DEVICE LETTERS, 1984, 5 (12) : 511 - 514
  • [22] IRRADIATION DAMAGE OF MOS-FETS OPERATING IN COMMON SOURCE MODE
    PHILIPP, LD
    LAURITZEN, PO
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1967, NS14 (06) : 284 - +
  • [23] A self-aligned gate-all-around MOS transistor on single-grain silicon
    Zhang, SD
    Han, RQ
    Wang, HM
    Chan, MS
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2004, 7 (04) : G59 - G61
  • [24] AN FM TUNER USING MOS-FETS AND INTEGRATED CIRCUITS
    BARRETT, J
    BLASER, L
    SUZUKI, H
    IEEE TRANSACTIONS ON BROADCAST AND TELEVISION RECEIVERS, 1965, BT11 (02): : 24 - &
  • [25] W/WSI GATE SELF-ALIGNED HIFETS (HETEROINTERFACE FETS) USING AN ALINAS/GAINAS HETEROSTRUCTURE GROWN BY MOCVD
    KAMADA, M
    ISHIKAWA, H
    KANEKO, K
    WATANABE, N
    ELECTRONICS LETTERS, 1988, 24 (05) : 271 - 272
  • [26] SELF-ALIGNED SILICIDES FOR MOS AND BIPOLAR-DEVICES
    AMANO, J
    HUANG, M
    ROSNER, J
    TURNER, J
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (03) : C133 - C133
  • [27] A NEW MAGNETOMETER USING A SMALL RING CORE AND MOS-FETS
    HARADA, K
    SUNOUCHI, Y
    SAKAMOTO, H
    IEEE TRANSACTIONS ON MAGNETICS, 1989, 25 (05) : 3399 - 3401
  • [28] 3-MASK SELF-ALIGNED MOS TECHNOLOGY
    MAI, CC
    CHAN, TC
    PALMER, RB
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (12) : 1162 - 1164
  • [29] Electroluminescence measurement of at self-aligned gate GaAs MESFETs
    Niwa, H
    Ohno, Y
    Kishimoto, S
    Mizutani, T
    Yamazaki, H
    Taniguchi, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (3B): : 1343 - 1347
  • [30] POLYSILICON OXIDATION SELF-ALIGNED MOS (POSA MOS) - A NEW SELF-ALIGNED DOUBLE SOURCE DRAIN ION-IMPLANTATION TECHNIQUE FOR VLSI
    HSIA, S
    FATEMI, R
    TENG, TC
    DEORNELLAS, S
    SUN, SC
    SKINNER, C
    ELECTRON DEVICE LETTERS, 1982, 3 (02): : 40 - 42
12345