SELF-ALIGNED MOLYBDENUM GATE MOS-FETS

被引：0

作者：

SINGH, A

机构：

来源：

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：707 / 710

页数：4

共 13 条

[1]

BROWN DM, 1968, SOLID STATE ELECTRON, V2, P1106

[2]

KERN W, 1970, RCA REV, V31, P187

[3]

LAUGHTON WJ, 1971, ELECTRONICS, V44, P68

[4]

RICHMAN P, 1967, CHARACTERISTICS OPER

[5]

SCOTT J, 1965, RCA REV US, V35, P357

[6] MOSFETS WITH LOW THRESHOLD VALUE [J].

SINGH, A ;

KEMHADJIAN, HA .

MICROELECTRONICS AND RELIABILITY, 1980, 20 (04) :533-534

[7] IMPROVED SERMOSFET PROCESS [J].

SINGH, A .

[8]

Singh A., 1979, Students' Journal of the Institution of Electronics & Telecommunication Engineers, V20, P179

[9] SPUTTERED MOLYBDENUM-SILICON CONTACT [J].

SINGH, A .

[10] SPUTTER-DELINEATED MOST PROCESS [J].

SINGH, A .