A STUDY OF SCHOTTKY-BARRIER FORMATION FOR GA-SI(111)-(2X1) AND SB-SI(111)-(2X1) INTERFACES

被引：24

作者：

FREEOUF, JL

AONO, M

HIMPSEL, FJ

EASTMAN, DE

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 03期

关键词：

D O I：

10.1116/1.571084

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：681 / 684

页数：4

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