MOBILE ION INSTABILITY IN SIO2-FILMS ON SILICON

The results of an experimental study of the instability caused by mobile sodium ions in thermally-grown silicon dioxide films have been reported. This paper is limited to the study of low-temperature ( less than 100 degree C) and especially room-temperature mobile ion instability phenomena which have received lesser attention in the past. The observed results have been discussed in terms of the trapping model and have been analyzed with the help of the model of Eldridge and Kerr. The possibility of the Schottky mechanism for the emission of Na** plus ions has also been explored and it has been found that this mechanism is more likely to be involved at the higher concentrations of Na** plus ions ( greater than 10**1**3/cm**2) in SiO//2 films.