DISORDER-INDUCED COVARIATION OF THE RESIDUAL RESISTANCE RATIO AND SUPERCONDUCTING T-C OF AMORPHOUS ZR60CU40

被引：2

作者：

KARPE, N ^{[1
]}

AHLGREN, M ^{[1
]}

BOTTIGER, J ^{[1
]}

CHECHENIN, NG ^{[1
]}

KROG, JP ^{[1
]}

NORDSTROM, A ^{[1
]}

RAPP, O ^{[1
]}

机构：

[1] AARHUS UNIV,INST PHYS & ASTRON,DK-8000 AARHUS,DENMARK

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 01期

关键词：

D O I：

10.1103/PhysRevB.51.625

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Melt-spun ribbons and thin films of amorphous Zr60Cu40 have been studied. Disorder was varied by neutron irradiation, Xe ion irradiation, and condensation on substrates at different temperatures. A correlation was found between the data for the superconducting Tc, and the residual resistance ratio, described by one curve for all samples. Increased electronic disorder was found to be the cause for this correlated depression of Tc and increasing residual resistance ratio. These results also give evidence for electronic disorder effects in the electrical resistivity of amorphous Zr60Cu40 up to room temperature. © 1995 The American Physical Society.

引用

页码：625 / 628

页数：4

共 26 条

[1] ELECTRONIC DISORDER IN SUPERCONDUCTING AMORPHOUS ZR-CO-P - COMPARISON WITH RESULTS FOR T(C) AND B(C2) OF AMORPHOUS-ALLOYS [J].