DISTRIBUTION OF DONORS AND ACCEPTORS IN HIGH-PURITY GERMANIUM CRYSTALS

被引：8

作者：

HALLER, EE ^{[1
]}

HANSEN, WL ^{[1
]}

GOULDING, FS ^{[1
]}

机构：

[1] UNIV CALIF,LAWRENCE BERKELEY LAB,BERKELEY,CA 94720

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1973年 / NS20卷 / 01期

关键词：

D O I：

10.1109/TNS.1973.4326951

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：481 / 487

页数：7

共 9 条

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BEER, AC ;

WILLARDSON, RK .

PHYSICAL REVIEW, 1958, 110 (06) :1286-1294

[2]

HALL RN, AT3013870 CONTR

[3]

HALLER EE, 1972, IEEE NUCL S, VNS19, P271

[4]

HANSEN WL, 1972, IEEE T NUCL SCI, VNS19, P260

[5]

MARRELLO V, TO BE PUBLISHED

[6] ANISOTROPIC HALL COEFFICIENTS IN N-TYPE GERMANIUM [J].

MIYAZAWA, H ;

MAEDA, H .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1960, 15 (11) :1924-1939

[7] FORMATION OF INJECTING AND BLOCKING CONTACTS ON HIGH-RESISTIVITY GERMANIUM [J].

OTTAVIANI, G ;

NICOLET, MA ;

CAYWOOD, JM ;

MAYER, JW ;

MARRELLO, V .

APPLIED PHYSICS LETTERS, 1972, 20 (08) :323-+

[8]

SECCOMBE SD, 1972, 1 LINC LAB SOL STAT, P43

[9]

van der Pauw L. J., 1958, PHILIPS RES REP, V1958, P1

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