DUAL-GATE OPERATION AND VOLUME INVERSION IN N-CHANNEL SOI MOSFETS

被引：54
作者：
VENKATESAN, S
NEUDECK, GW
PIERRET, RF
机构：
[1] School of Electrical Engineering, Purdue University, West Lafayette, IN.
来源：
IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 01期
关键词：
D O I：
10.1109/55.144946
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of volume inversion in thin-film short-channel SOI MOSFET's and the efficacy of dual-gate operation in enhancing their device performance have been analyzed using two-dimensional device simulations and one-dimensional analytical computations. The analyses have been restricted to the strong inversion regime, which is the practically useful region of operation of the SOI MOSFET's. In this region, the analyses suggest that when compared at constant V(G) - V(T) values, the dual-channel. volume inverted devices do not offer significant current-enhancement advantages, other than that expected from the second channel, over the conventional single-channel devices for silicon thicknesses in the 0.1-mu-m range.
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页码：44 / 46
页数：3
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