EFFECTS OF CATION DIFFUSION DURING CHEMICAL BEAM ETCHING

被引：3

作者：

CHIU, TH ^{[1
]}

TSANG, WT ^{[1
]}

WILLIAMS, MD ^{[1
]}

MENDONCA, CAC ^{[1
]}

DREYER, K ^{[1
]}

STORZ, FG ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)00714-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The surface reconstruction during chemical beam etching of GaAs by AsCl3 is discussed. The existence of reflection high energy electron diffraction (RHEED) intensity oscillation indicates a planar etching mode in the initial stage. Its evolution into a three-dimensional (3D) etching can be understood in terms of suppressed cation diffusion during etch. Appropriate choice of etch parameters that enhance the cation diffusion is the key to obtain smooth etching morphology. The effectiveness of etch cleaning is subjected to the planarity of the surface during etch, and the chemical reactivity of the contaminants with the etching gas. This is illustrated by etching of the Be and Si delta-doped structures in GaAs.

引用

页码：546 / 550

页数：5

共 7 条

[1] ETCHING OF INP BY HCL IN AN OMVPE REACTOR [J].