GAAS(001) EPITAXIAL LAYER ON SOS USING A SPECIFICALLY DESIGNED MOCVD SYSTEM

被引：5

作者：

NISHIMURA, T ^{[1
]}

KADOIWA, K ^{[1
]}

HAYAFUJI, N ^{[1
]}

MUROTANI, T ^{[1
]}

IBUKI, S ^{[1
]}

机构：

[1] SETSUNAN UNIV, FAC ENGN, NEYAGAWA, OSAKA 572, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 10期

关键词：

D O I：

10.1143/JJAP.28.L1696

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L1696 / L1699

页数：4

共 13 条

[1] GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD
AKIYAMA, M
KAWARADA, Y
KAMINISHI, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (11): : L843 - L845
[2] AKIYAMA M, 1984, J CRYST GROWTH, V68, P21, DOI 10.1016/0022-0248(84)90391-9
[3] HETEROEPITAXIAL GROWTH AND CHARACTERIZATION OF GAAS ON SILICON-ON-SAPPHIRE AND SAPPHIRE SUBSTRATES
HUMPHREYS, TP
MINER, CJ
POSTHILL, JB
DAS, K
SUMMERVILLE, MK
NEMANICH, RJ
SUKOW, CA
PARIKH, NR
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (17) : 1687 - 1689
[4] MATERIAL AND DEVICE PROPERTIES OF GAAS ON SAPPHIRE GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
KASAI, K
NAKAI, K
OZEKI, M
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (01) : 1 - 5
[5] USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .I. EPITAXIAL GALLIUM-V COMPOUNDS
MANASEVIT, HM
SIMPSON, WI
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) : 1725 - +
[6] STRUCTURAL-PROPERTIES OF GAAS ON (001) ORIENTED SI AND GE SUBSTRATES
NEUMANN, DA
ZABEL, H
FISCHER, R
MORKOC, H
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (03) : 1023 - 1029
[7] REDUCTION OF DISLOCATION DENSITY IN GAAS/SI BY STRAINED-LAYER SUPERLATTICE OF INXGA1-XAS-GAASYP1-Y
NISHIMURA, T
MIZUGUCHI, K
HAYAFUJI, N
MUROTANI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (07): : L1141 - L1143
[8] DISLOCATION REDUCTION IN GAAS ON SI BY THERMAL CYCLES AND INGAAS/GAAS STRAINED-LAYER SUPERLATTICES
OKAMOTO, H
WATANABE, Y
KADOTA, Y
OHMACHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (12): : L1950 - L1952
[9] ROSEN A, 1981, RCA REV, V42, P633
[10] SHAW DW, 1987, MATER RES SOC S P, V91, P15

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