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A NEW METHOD FOR ENHANCING FOCUS LATITUDE IN OPTICAL LITHOGRAPHY - FLEX
被引:29
作者
:
FUKUDA, H
论文数:
0
引用数:
0
h-index:
0
FUKUDA, H
HASEGAWA, N
论文数:
0
引用数:
0
h-index:
0
HASEGAWA, N
TANAKA, T
论文数:
0
引用数:
0
h-index:
0
TANAKA, T
HAYASHIDA, T
论文数:
0
引用数:
0
h-index:
0
HAYASHIDA, T
机构
:
来源
:
IEEE ELECTRON DEVICE LETTERS
|
1987年
/ 8卷
/ 04期
关键词
:
D O I
:
10.1109/EDL.1987.26594
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:179 / 180
页数:2
相关论文
共 3 条
[1]
CHARACTERIZATION OF POSITIVE PHOTORESIST
DILL, FH
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IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
DILL, FH
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IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
HORNBERGER, WP
HAUGE, PS
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机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
HAUGE, PS
SHAW, JM
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IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
SHAW, JM
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1975,
ED22
(07)
: 445
-
452
[2]
Griffing B. F., 1983, ELECTRON DEVICE LETT, V4, P14
[3]
GENERAL SIMULATOR FOR VLSI LITHOGRAPHY AND ETCHING PROCESSES .1. APPLICATION TO PROJECTION LITHOGRAPHY
OLDHAM, WG
论文数:
0
引用数:
0
h-index:
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机构:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley
OLDHAM, WG
NANDGAONKAR, SN
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NEUREUTHER, AR
论文数:
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引用数:
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h-index:
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机构:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley
NEUREUTHER, AR
OTOOLE, M
论文数:
0
引用数:
0
h-index:
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机构:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley
OTOOLE, M
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
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(04)
: 717
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722
←
1
→
共 3 条
[1]
CHARACTERIZATION OF POSITIVE PHOTORESIST
DILL, FH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
DILL, FH
HORNBERGER, WP
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
HORNBERGER, WP
HAUGE, PS
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
HAUGE, PS
SHAW, JM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
SHAW, JM
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1975,
ED22
(07)
: 445
-
452
[2]
Griffing B. F., 1983, ELECTRON DEVICE LETT, V4, P14
[3]
GENERAL SIMULATOR FOR VLSI LITHOGRAPHY AND ETCHING PROCESSES .1. APPLICATION TO PROJECTION LITHOGRAPHY
OLDHAM, WG
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley
OLDHAM, WG
NANDGAONKAR, SN
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley
NANDGAONKAR, SN
NEUREUTHER, AR
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley
NEUREUTHER, AR
OTOOLE, M
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley
OTOOLE, M
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(04)
: 717
-
722
←
1
→