STRUCTURE AND ORIGIN OF GROWTH STRIATIONS IN DISLOCATION-FREE SI CRYSTALS

被引：0
|
作者：
ABE, T
ABE, Y
CHIKAWA, J
机构：
[1] SHIN ETSU HANDOTAI CO,ANNAKA,GUMMA 379 01,JAPAN
[2] NIPPON HOSO KYOKAI,TOKYO,JAPAN
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1973年 / 120卷 / 03期
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D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：C94 / &
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