STRUCTURE AND ORIGIN OF GROWTH STRIATIONS IN DISLOCATION-FREE SI CRYSTALS

被引：0

作者：

ABE, T

ABE, Y

CHIKAWA, J

机构：

[1] SHIN ETSU HANDOTAI CO,ANNAKA,GUMMA 379 01,JAPAN

[2] NIPPON HOSO KYOKAI,TOKYO,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1973年 / 120卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C94 / &

共 50 条

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