LOW-TEMPERATURE-PROCESSED (150-175-DEGREES-C) GE/PD-BASED OHMIC CONTACTS(RHO(C)SIMILAR-TO-1X10(-6)OMEGA-CM(2)) TO N-GAAS

被引：42

作者：

WANG, LC ^{[1
]}

HAO, PH ^{[1
]}

WU, BJ ^{[1
]}

机构：

[1] THREE M CO,PHOTON RES LAB,ST PAUL,MN 55144

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 04期

关键词：

D O I：

10.1063/1.114552

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed low resistance (rho(c) similar to 1x10(-6) Omega cm(2)) Ge/Pd-based (the Au/Ge/Pd and the Ag/Ge/Pd contacts) Ohmic contact schemes processed at temperatures 150-175 degrees C to n-GaAs (n similar to 1x10(18) cm(-3)). The Ohmic contact formation mechanism can be rationalized in terms of the solid phase regrowth (SPR) principle and the interdiffusion between Au (or Ag) and Ge. (C) 1995 American Institute of Physics.

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页码：509 / 511

页数：3

相关论文

共 16 条

[1] VERTICAL-CAVITY SURFACE-EMITTING LASERS INTEGRATED ONTO SILICON SUBSTRATES BY PDGE CONTACTS [J].

FATHOLLAHNEJAD, H ;

MATHINE, DL ;

DROOPAD, R ;

MARACAS, GN ;

DARYANANI, S .

ELECTRONICS LETTERS, 1994, 30 (15) :1235-1236

[2] LOW-RESISTANCE PD/GE OHMIC CONTACTS TO EPITAXIALLY LIFTED-OFF N-TYPE GAAS FILM [J].

FATHOLLAHNEJAD, H ;

RAJESH, R ;

LIU, J ;

DROOPAD, R ;

MARACAS, GN ;

CARPENTER, RW .

JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (01) :35-38

[3]

HERGER HH, 1972, SOLID STATE ELECTRON, V15, P145

[4]

LAU SS, 1978, THIN FILMS INTERDIFF, pCH12

[5] NONALLOYED OHMIC CONTACTS TO N-GAAS BY SOLID-PHASE EPITAXY OF GE [J].

MARSHALL, ED ;

ZHANG, B ;

WANG, LC ;

JIAO, PF ;

CHEN, WX ;

SAWADA, T ;

LAU, SS ;

KAVANAGH, KL ;

KUECH, TF .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) :942-947

[6] NON-ALLOYED OHMIC CONTACT TO NORMAL-GAAS BY SOLID-PHASE EPITAXY [J].

MARSHALL, ED ;

CHEN, WX ;

WU, CS ;

LAU, SS ;

KUECH, TF .

APPLIED PHYSICS LETTERS, 1985, 47 (03) :298-300

[7]

Massalski T.B., 1996, BINARY ALLOY PHASE D

[8] CONTACT DEGRADATION OF GAAS TRANSFERRED ELECTRON DEVICES [J].

PALMSTROM, CJ ;

MORGAN, DV ;

HOWES, MJ .

NUCLEAR INSTRUMENTS & METHODS, 1978, 150 (02) :305-311

[9] SOLID-PHASE REGROWTH OF COMPOUND SEMICONDUCTORS BY REACTION-DRIVEN DECOMPOSITION OF INTERMEDIATE PHASES [J].

SANDS, T ;

MARSHALL, ED ;

WANG, LC .

JOURNAL OF MATERIALS RESEARCH, 1988, 3 (05) :914-921

[10] RECENT DEVELOPMENTS IN OHMIC CONTACTS FOR III-V COMPOUND SEMICONDUCTORS [J].

SHEN, TC ;

GAO, GB ;

MORKOC, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (05) :2113-2132