RAMAN TENSOR OF GERMANIUM AND ZINCBLENDE-TYPE SEMICONDUCTORS

被引:21
作者
CARDONA, M
机构
关键词
D O I
10.1016/0038-1098(71)90571-0
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:819 / &
相关论文
共 18 条
[1]  
BELL M, 1969 P S EL DENS STA
[2]   OPTICAL PROPERTIES AND ELECTRONIC DENSITY OF STATES [J].
CARDONA, M .
JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS SECTION A-PHYSICS AND CHEMISTRY, 1970, A 74 (02) :253-+
[3]   BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J].
COHEN, ML ;
BERGSTRESSER, TK .
PHYSICAL REVIEW, 1966, 141 (02) :789-+
[4]   INTRINSIC OPTICAL ABSORPTION OF GALLIUM PHOSPHIDE BETWEEN 2.33 AND 3.12 EV [J].
DEAN, PJ ;
KAMINSKY, G ;
ZETTERSTROM, RB .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (09) :3551-+
[5]  
GOROFF I, 1963, PHYS REV, V132, P1080
[6]   INTRINSIC PIEZOBIREFRINGENCE OF GE, SI, AND GAAS [J].
HIGGINBOTHAM, CW ;
CARDONA, M ;
POLLAK, FH .
PHYSICAL REVIEW, 1969, 184 (03) :821-+
[7]   CONTRIBUTIONS TO OPTICAL NONLINEARITY IN GAAS AS DETERMINED FROM RAMAN SCATTERING EFFICIENCIES [J].
JOHNSTON, WD ;
KAMINOW, IP .
PHYSICAL REVIEW, 1969, 188 (03) :1209-&
[8]  
LAWAETZ P, TO BE PUBLISHED
[9]   RESONANT SURFACE RAMAN SCATTERING IN DIRECT-GAP SEMICONDUCTORS [J].
LEITE, RCC ;
SCOTT, JF .
PHYSICAL REVIEW LETTERS, 1969, 22 (04) :130-&
[10]  
LEITE RCC, 1969, LIGHT SCATTERING SPE, P359