NATIVE OXIDE STABILIZATION OF ALAS-GAAS HETEROSTRUCTURES

被引：65

作者：

SUGG, AR ^{[1
]}

HOLONYAK, N ^{[1
]}

BAKER, JE ^{[1
]}

KISH, FA ^{[1
]}

DALLESASSE, JM ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 11期

关键词：

D O I：

10.1063/1.105213

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented on the stabilization of AlAs-GaAs heterostructures against atmospheric (destructive) hydrolysis using the native oxide that can be formed (N2 + H2O, 400-degrees-C, 3 h) on the AlAs layer. The approximately 0.1-mu-m-thick native oxide formed from the AlAs layer is shown to be stable with aging (approximately 100 days), while unoxidized samples degrade through the AlAs (0.1-mu-m) down into the GaAs as deep as approximately 1-mu-m. Relative to oxides formed (approximately 25-degrees-C) on AlAs (or Al(x)Ga(1-x)As), x greater-than-or-similar-to 0.7) under atmospheric conditions (hydrolysis), oxides formed (via N2 + H2O) at higher temperatures (greater-than-or-similar-to 400-degrees-C) are much more stable and seal the underlying crystal (e.g., GaAs).

引用

页码：1199 / 1201

页数：3

共 8 条

[1]

BAILAR JC, 1973, COMPREHENSIVE INORGA, V1, P1034

[2] STABILITY OF ALAS IN ALXGA1-XAS-ALAS-GAAS QUANTUM-WELL HETEROSTRUCTURES [J].