EFFECT OF RADIATION-DAMAGE ON THE METAL-INSULATOR-TRANSITION AND LOW-TEMPERATURE TRANSPORT IN THE TETRAMETHYLTETRASELENOFULVALINIUM PF6 SALT [(TMTSF)2PF6]

被引：79

作者：

CHOI, MY ^{[1
]}

CHAIKIN, PM ^{[1
]}

HUANG, SZ ^{[1
]}

HAEN, P ^{[1
]}

ENGLER, EM ^{[1
]}

GREENE, RL ^{[1
]}

机构：

[1] IBM CORP,RES LAB,SAN JOSE,CA 95193

来源：

PHYSICAL REVIEW B | 1982年 / 25卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.25.6208

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6208 / 6217

页数：10

共 34 条

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[6]

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PHYSICAL REVIEW LETTERS, 1981, 46 (13) :852-855

[8] PROPERTIES OF 5 HIGHLY CONDUCTING SALTS - (TMTSF)2X,X=PF6-,ASF6-,BF4- AND NO3-, DERIVED FROM TETRAMETHYLTETRASELENAFULVALENE (TMTSF) [J].

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