ELECTROREFLECTANCE STUDY OF STRAINED-LAYER GEXSI1-X/SI MULTIPLE-QUANTUM WELLS

被引：1

作者：

PAN, SH ^{[1
]}

HUANG, S ^{[1
]}

CHEN, W ^{[1
]}

ZHANG, CH ^{[1
]}

SHENG, C ^{[1
]}

WANG, X ^{[1
]}

机构：

[1] FUDAN UNIV, SURFACE PHYS LAB, SHANGHAI 200433, PEOPLES R CHINA

来源：

CHINESE PHYSICS LETTERS | 1994年 / 11卷 / 02期

关键词：

D O I：

10.1088/0256-307X/11/2/016

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A set of strained-layer GexSi1-x/Si multiple quantum wells has been investigated by electroreflectance (ER) spectroscopy. In the ER spectra we have observed transitions in the quantum wells associated with the critical points E0, E1, as well as E0'. The transitions of E0 and E0', which are very weak in the bulk material, are apperently enhanced in quantum wells.

引用

页码：119 / 122

页数：4

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