DETERMINATION OF EFFECTIVE NITROGEN CONCENTRATION IN GA(AS,P) - N LIGHT-EMITTING-DIODES FROM PHOTOCURRENT MEASUREMENTS

被引:2
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ALBRECHT, H
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10.1063/1.92281
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O59 [应用物理学];
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页码:147 / 149
页数:3
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共 17 条
[1]   MEASUREMENT OF EXTRINSIC ROOM-TEMPERATURE MINORITY CARRIER LIFETIME IN GAP [J].
BACHRACH, RZ ;
LORIMOR, OG .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) :500-&
[2]   HIGH-EFFICIENCY GAP GREEN LEDS BY ZINC DIFFUSION INTO AN NORMAL-LPE LAYER [J].
BEPPU, T ;
IWAMOTO, M ;
NAITO, M ;
KASAMI, A .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (07) :951-955
[3]  
BLEICHER M, 1976, HALBLEITER OPTOELEKT
[4]   BAND-STRUCTURE ENHANCEMENT AND OPTIMIZATION OF RADIATIVE RECOMBINATION IN GAAS1-XPX-N (AND IN1-XGAXP-N) [J].
CAMPBELL, JC ;
HOLONYAK, N ;
CRAFORD, MG ;
KEUNE, DL .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) :4543-4553
[5]   VAPOR-PHASE EPITAXIAL MATERIALS FOR LED APPLICATIONS [J].
CRAFORD, MG ;
GROVES, WO .
PROCEEDINGS OF THE IEEE, 1973, 61 (07) :862-880
[6]   RECENT DEVELOPMENTS IN LIGHT-EMITTING-DIODE TECHNOLOGY [J].
CRAFORD, MG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (07) :935-943
[7]   FLUORESCENT DECAY TIMES OF EXCITONS BOUND TO ISOELECTRONIC TRAPS IN GAP AND ZNTE [J].
CUTHBERT, JD ;
THOMAS, DG .
PHYSICAL REVIEW, 1967, 154 (03) :763-&
[8]   KINETICS OF RECOMBINATION IN NITROGEN-DOPED GAP [J].
DAPKUS, PD ;
HACKETT, WH ;
LORIMOR, OG ;
BACHRACH, RZ .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (11) :4920-4930
[9]   GREEN ELECTROLUMINESCENCE FROM GALLIUM PHOSPHIDE DIODES NEAR ROOM TEMPERATURE [J].
DEAN, PJ ;
GERSHENZON, M ;
KAMINSKY, G .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (13) :5332-+
[10]   ABSORPTION AND PHOTOLUMINESCENT MEASUREMENTS IN INDIRECT, NITROGEN DOPED GAAS1-XPX [J].
GAL, M ;
GOROG, T ;
KERESZTURY, A .
SOLID STATE COMMUNICATIONS, 1977, 21 (05) :491-493