GROWTH OF HGSE AND HG1-XCDXSE THIN-FILMS BY MOLECULAR-BEAM EPITAXY

被引：18

作者：

LANSARI, Y

COOK, JW

SCHETZINA, JF

机构：

[1] Department of Physics, North Carolina State University, Raleigh, 27695-8202, NC

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1993年 / 22卷 / 08期

关键词：

CHARACTERISTICS OF THIN FILMS; HGSE; HGCDSE; MBE; SEMIMETALS;

D O I：

10.1007/BF02817490

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin epitaxial films of HgSe and Hg1-xCdxSe (x less-than-or-equal-to 0.34) were successfully grown for the first time by molecular beam epitaxy. Film growth parameters are discussed, and results of structural, electrical, and optical studies are reported.

引用

页码：809 / 813

页数：5

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