PHOTOLUMINESCENCE STUDY OF SULFIDE LAYERS ON P-TYPE INP

被引：16
作者：
LEONELLI, R
SUNDARARAMAN, CS
CURRIE, JF
机构：
[1] UNIV MONTREAL,RECH COUCHES MINCES GRP,MONTREAL H3C 3J7,QUEBEC,CANADA
[2] ECOLE POLYTECH,DEPT GENIE PHYS,MONTREAL H3C 3A7,QUEBEC,CANADA
[3] ECOLE POLYTECH,RECH COUCHES MINCES GRP,MONTREAL H3C 3A7,QUEBEC,CANADA
来源：
APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 25期
关键词：
D O I：
10.1063/1.103798
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The emission spectra from sulfurized p-InP annealed at temperatures below 300°C are compared with those from untreated samples annealed under the same conditions. The unsulfurized samples show a VP related emission band at 1.14 eV whose intensity increases linearly with annealing temperature. The sulfurized samples exhibit an emission band at 0.94 eV attributed to a S P deep level. Both bands disappear when a layer of 20 Å is chemically removed. This shows that both VP and SP formation is limited to a few atomic surface layers.
引用
收藏
页码：2678 / 2679
页数：2
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