PHOTOLUMINESCENCE STUDY OF SULFIDE LAYERS ON P-TYPE INP

被引：16

作者：

LEONELLI, R

SUNDARARAMAN, CS

CURRIE, JF

机构：

[1] UNIV MONTREAL,RECH COUCHES MINCES GRP,MONTREAL H3C 3J7,QUEBEC,CANADA

[2] ECOLE POLYTECH,DEPT GENIE PHYS,MONTREAL H3C 3A7,QUEBEC,CANADA

[3] ECOLE POLYTECH,RECH COUCHES MINCES GRP,MONTREAL H3C 3A7,QUEBEC,CANADA

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 25期

关键词：

D O I：

10.1063/1.103798

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The emission spectra from sulfurized p-InP annealed at temperatures below 300°C are compared with those from untreated samples annealed under the same conditions. The unsulfurized samples show a VP related emission band at 1.14 eV whose intensity increases linearly with annealing temperature. The sulfurized samples exhibit an emission band at 0.94 eV attributed to a S P deep level. Both bands disappear when a layer of 20 Å is chemically removed. This shows that both VP and SP formation is limited to a few atomic surface layers.

引用

页码：2678 / 2679

页数：2