STUDY OF SURFACE RECOMBINATION IN GAAS AND INP BY PICOSECOND OPTICAL TECHNIQUES

被引:61
作者
HOFFMAN, CA [1 ]
GERRITSEN, HJ [1 ]
NURMIKKO, AV [1 ]
机构
[1] BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912
关键词
D O I
10.1063/1.327816
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1603 / 1604
页数:2
相关论文
共 3 条
[1]   EVIDENCE FOR LOW SURFACE RECOMBINATION VELOCITY ON N-TYPE INP [J].
CASEY, HC ;
BUEHLER, E .
APPLIED PHYSICS LETTERS, 1977, 30 (05) :247-249
[2]   MEASUREMENT OF SURFACE RECOMBINATION VELOCITY IN SEMICONDUCTORS BY DIFFRACTION FROM PICOSECOND TRANSIENT FREE-CARRIER GRATINGS [J].
HOFFMAN, CA ;
JARASIUNAS, K ;
GERRITSEN, HJ ;
NURMIKKO, AV .
APPLIED PHYSICS LETTERS, 1978, 33 (06) :536-539
[3]  
Schwartz B., 1975, Critical Reviews in Solid State Sciences, V5, P609, DOI 10.1080/10408437508243518