LOW-THRESHOLD GAAS/ALGAAS LASERS GROWN ON SI BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：13

作者：

CHOI, HK

LEE, JW

SALERNO, JP

CONNORS, MK

TSAUR, BY

FAN, JCC

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 14期

关键词：

D O I：

10.1063/1.99178

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1114 / 1115

页数：2

共 9 条

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[3]

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[4] STABILITY OF 300-K CONTINUOUS OPERATION OF P-N ALXGA1-XAS-GAAS QUANTUM-WELL LASERS GROWN ON SI [J].

DEPPE, DG ;

NAM, DW ;

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HSIEH, KC ;

MATYI, RJ ;

SHICHIJO, H ;

EPLER, JE ;

CHUNG, HF .

APPLIED PHYSICS LETTERS, 1987, 51 (16) :1271-1273

[5] ROOM-TEMPERATURE CONTINUOUS OPERATION OF P-N ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURE LASERS GROWN ON SI [J].

DEPPE, DG ;

HOLONYAK, N ;

NAM, DW ;

HSIEH, KC ;

JACKSON, GS ;

MATYI, RJ ;

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EPLER, JE ;

CHUNG, HF .

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[6]

SALERNO JP, 1987, SPR MAT RES SOC M AN

[7] LOW-THRESHOLD ALGAAS/GAAS MQW LASER DIODE FABRICATED ON SI SUBSTRATES BY MOCVD [J].

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UMENO, M .

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[8]

TSAUR BY, 1982, 16TH P IEEE PHOT SPE, P1143

[9] ALGAAS DOUBLE-HETEROSTRUCTURE DIODE-LASERS FABRICATED ON A MONOLITHIC GAAS/SI SUBSTRATE [J].

WINDHORN, TH ;

METZE, GM ;

TSAUR, BY ;

FAN, JCC .

APPLIED PHYSICS LETTERS, 1984, 45 (04) :309-311

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