SPONTANEOUS GROWTH OF COHERENT TILTED SUPERLATTICE ON VICINAL (100) GAAS SUBSTRATES

被引：87
|
作者：
TSUCHIYA, M [1 ]
PETROFF, PM [1 ]
COLDREN, LA [1 ]
机构：
[1] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106
来源：
APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 17期
关键词：
D O I：
10.1063/1.101304
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1690 / 1692
页数：3
相关论文
共 50 条
  • [1] MBE GROWTH OF TILTED SUPERLATTICES AND QUANTUM WIRES ON VICINAL GAAS SUBSTRATES
    PETROFF, PM
    TSUCHIYA, M
    CHALMERS, SA
    KROEMER, H
    GOSSARD, AC
    COLDREN, LA
    FIRST INTERNATIONAL MEETING ON ADVANCED PROCESSING AND CHARACTERIZATION TECHNOLOGIES: FABRICATION AND CHARACTERIZATION OF SEMICONDUCTOR OPTOELECTRONIC DEVICES AND INTEGRATED CIRCUITS, VOLS 1 AND 2, 1989, : A55 - A58
  • [2] Spontaneous formation of a tilted AlGaAs/GaAs superlattice during AlGaAs growth
    Hartmann, A
    Dieker, C
    Hollfelder, M
    Hardtdegen, H
    Forster, A
    Luth, H
    APPLIED SURFACE SCIENCE, 1998, 123 : 704 - 709
  • [3] MBE growth of MnTe/ZnTe superlattices on GaAs (100) vicinal substrates
    Suzuki, T
    Ishibe, I
    Nabetani, Y
    Kato, T
    Matsumoto, T
    JOURNAL OF CRYSTAL GROWTH, 2002, 237 : 1374 - 1377
  • [4] MBE growth of different hexagonal GaN crystal structures on vicinal (100) GaAs substrates
    Georgakilas, A
    Czigany, Z
    Amimer, K
    Davydov, VY
    Toth, L
    Pecz, B
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 82 (1-3): : 16 - 18
  • [5] Growth of InP quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition
    Zhang, XB
    Heller, RD
    Noh, MS
    Dupuis, RD
    Walter, G
    Holonyak, N
    APPLIED PHYSICS LETTERS, 2003, 83 (03) : 476 - 478
  • [6] INITIAL GROWTH OF GAAS ON VICINAL SI(110) SUBSTRATES
    YODO, T
    TAMURA, M
    SAITOH, T
    JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 665 - 670
  • [7] MOLECULAR-BEAM EPITAXY GROWTH OF TILTED GAAS ALAS SUPERLATTICES BY DEPOSITION OF FRACTIONAL MONOLAYERS ON VICINAL (001) SUBSTRATES
    GAINES, JM
    PETROFF, PM
    KROEMER, H
    SIMES, RJ
    GEELS, RS
    ENGLISH, JH
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04): : 1378 - 1381
  • [8] Growth of spatially ordered InAs quantum dots on step-bunched vicinal GaAs (100) substrates
    Poser, F
    Bhattacharya, A
    Weeke, S
    Richter, W
    JOURNAL OF CRYSTAL GROWTH, 2003, 248 : 317 - 321
  • [9] Thick hydride vapor phase epitaxial growth of ZnSe on GaAs (100) vicinal and orientation patterned substrates
    Vangala, Shivashankar R.
    Brinegar, Duane
    Tassev, Vladimir L.
    Snure, Michael
    JOURNAL OF CRYSTAL GROWTH, 2019, 522 : 230 - 234
  • [10] SUPERLATTICE STRUCTURE OBSERVATION FOR (ALAS)1/2(GAAS)1/2 GROWN ON (001) VICINAL GAAS SUBSTRATES
    FUKUI, T
    SAITO, H
    TOKURA, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (07): : L1320 - L1322
12345