P-I-N-DIODE REVERSE-BIAS SWITCHING VIA INDUCTIVE DISCHARGING

被引：0

作者：

GEORGOPOULOS, CJ ^{[1
]}

MAKIOS, V ^{[1
]}

机构：

[1] UNIV PATRAS,SCH ENGN,PATRAS,GREECE

来源：

ELECTRONICS LETTERS | 1978年 / 14卷 / 23期

关键词：

Semiconductor diodes; Semiconductor switches;

D O I：

10.1049/el:19780488

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Reverse switching of high-power p-i-n diodes can be achieved by inductive discharge. In this type of switching there is a direct interaction between the energy-storing element and the p-i-n diodes, and the current and voltage waveforms follow somewhat different equations to those of a conventional driving circuit. © 1978, The Institution of Electrical Engineers. All rights reserved.

引用

页码：723 / 724

页数：2

共 4 条

[1] REVERSE RECOVERY PROCESSES IN SILICON POWER RECTIFIERS
BENDA, H
SPENKE, E
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08): : 1331 - &
[2] ANALYSIS OF FORWARD-BIAS P-I-N-DIODE INDUCTIVE DRIVING
GEORGOPOULOS, CJ
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1977, 12 (04) : 394 - 402
[3] CURRENT AND VOLTAGE WAVEFORMS FOR REVERSE SWITCHING HIGH-POWER P-I-N DIODES
GEORGOPOULOS, CJ
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (02) : 286 - 295
[4] UNIT-CUBE EXPRESSION FOR SPACE-CHARGE RESISTANCE
SZE, SM
SHOCKLEY, W
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (05): : 837 - +

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