DENSITY-FUNCTIONAL APPROACH TO METAL-INSULATOR-TRANSITION IN DOPED SEMICONDUCTORS

被引：44
作者：
GHAZALI, A
LEROUXHUGON, P
机构：
来源：
PHYSICAL REVIEW LETTERS | 1978年 / 41卷 / 22期
关键词：
D O I：
10.1103/PhysRevLett.41.1569
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：1569 / 1572
页数：4
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