GROWTH OF CULNSE2 ON CDS USING MOLECULAR-BEAM EPITAXY

被引：43

作者：

WHITE, FR

CLARK, AH

GRAF, MC

KAZMERSKI, LL

机构：

[1] UNIV MAINE,ORONO,ME 04473

[2] SOLAR ENERGY RES INST,GOLDEN,CO 80401

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 01期

关键词：

D O I：

10.1063/1.325624

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Molecular beam epitaxy has been used to grow CuInSe2 on CdS(0001B). Epitaxial growth, as determined from in situ reflection electron diffraction, was observed at a substrate temperature of 300°C.

引用

页码：544 / 545

页数：2

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