Analytical Model for Output Transfer Characteristics AlGaN/GaN Based HEMT's

被引：0

作者：

Hanzaz, M. ^{[1
]}

Fadlo, S. ^{[2
]}

Cordier, Y. ^{[2
]}

机构：

[1] Hassan II Univ, Fac Sci Ain Chock, LPPMAT Lab, Km 8,Route El Jadida,BP 5366, Casablanca, Morocco

[2] CRHEA, F-06560 Valbonne, France

来源：

JOURNAL OF ACTIVE AND PASSIVE ELECTRONIC DEVICES | 2013年 / 8卷 / 2-3期

关键词：

AlGaN; HEMT; analytical model; 2-DEG;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The goal of this study is to develop a model of I-V characteristic in AlGaN/GaN HEMT's in order to explain physical mechanism underlying electrical conduction governed by two-dimensional electron gas density in the AlGaN/GaN heterointerface. We notice that the theoretical results are in good agreement with our experiments. The transfer characteristics are also studied for different devices. The model provides a good insight into the physical operation of the devices and led to devices optimization and performance prediction.

引用

页码：131 / 139

页数：9

共 19 条

[1] Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures [J].

Ambacher, O ;

Smart, J ;

Shealy, JR ;

Weimann, NG ;

Chu, K ;

Murphy, M ;

Schaff, WJ ;

Eastman, LF ;

Dimitrov, R ;

Wittmer, L ;

Stutzmann, M ;

Rieger, W ;

Hilsenbeck, J .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (06) :3222-3233

[2] Very low dark current metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers [J].

Carrano, JC ;

Grudowski, PA ;

Eiting, CJ ;

Dupuis, RD ;

Campbell, JC .

APPLIED PHYSICS LETTERS, 1997, 70 (15) :1992-1994

[3] Schottky barrier detectors on GaN for visible-blind ultraviolet detection [J].

Chen, Q ;

Yang, JW ;

Osinsky, A ;

Gangopadhyay, S ;

Lim, B ;

Anwar, MZ ;

Khan, MA ;

Kuksenkov, D ;

Temkin, H .

APPLIED PHYSICS LETTERS, 1997, 70 (17) :2277-2279

[4] Electron mobility and transfer characteristics in AlGaN/GaN HEMTs [J].

Cordier, Y ;

Hugues, M ;

Lorenzini, P ;

Semond, F ;

Natali, F ;

Massies, J .

PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7, 2005, 2 (07) :2720-2723

[5] A new SPICE MOSFET level 3-like model of HEMT's for circuit simulation [J].

DasGupta, N ;

DasGupta, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (07) :1494-1500

[6] MODEL FOR MODULATION DOPED FIELD-EFFECT TRANSISTOR [J].

DRUMMOND, TJ ;

MORKOC, H ;

LEE, K ;

SHUR, M .

ELECTRON DEVICE LETTERS, 1982, 3 (11) :338-341

[7] A compact C-V model for 120 nm AlGaN/GaN HEMT with modified field dependent mobility for high frequency applications [J].

Gangwani, Parvesh ;

Pandey, Sujata ;

Haldar, Subhasis ;

Gupta, Mridula ;

Gupta, R. S. .

MICROELECTRONICS JOURNAL, 2007, 38 (8-9) :848-854

[8] Polarization dependent analysis of AlGaN/GaN HEMT for high power applications [J].

Gangwani, Parvesh ;

Pandey, Sujata ;

HaIdar, Subhasis ;

Gupta, Mridula ;

Gupta, R. S. .

SOLID-STATE ELECTRONICS, 2007, 51 (01) :130-135

[9]

Gaska R., 1997, IEEE ELECTR DEVICE L, V18, P290

[10] Impact of the defects on the electrical and optical properties of AlGaN ultraviolet photodetectors [J].

Hanzaz, M ;

Bouhdada, A ;

Gibart, P ;

Omnès, F .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (01) :13-18

← 1 2 →