Minimal pressure of reverse displacement of high-power pin-diode key

被引：0

作者：

Lebedev, IV

Shnitnikov, AS

Drozdovskaya, LM

机构：

来源：

IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII RADIOELEKTRONIKA | 1995年 / 38卷 / 9-10期

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D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：A34 / A42

页数：9

共 10 条

[1] P-I-N-DIODES FOR LOW-FREQUENCY HIGH-POWER SWITCHING APPLICATIONS [J].

CAULTON, M ;

ROSEN, A ;

STABILE, PJ ;

GOMBAR, A .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1982, 30 (06) :875-882

[2] ESTABLISHING THE MINIMUM REVERSE BIAS FOR A P-I-N-DIODE IN A HIGH-POWER SWITCH [J].

CAVERLY, RH ;

HILLER, G .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1990, 38 (12) :1938-1943

[3]

FILATOV NI, 1986, RADIOELEKTRONIKA, V29, P84

[4]

HENISH H, 1984, SEMICONDUCTOR CONTAC

[5]

LEBEDEV IV, 1993, RADIOELEKTRONIKA, V36, P3

[6]

LEBEDEV IV, 1995, VESTNIK MEI, P19

[7]

LEBEDEV IV, 1992, RADIOELEKTRONIKA, V35, P17

[8] MICROWAVE LIMITER DIODE PERFORMANCE ANALYZED BY MATHEMATICAL-MODELING [J].

SHNITNIKOV, AS ;

PHILATOV, NI .

SOLID-STATE ELECTRONICS, 1991, 34 (01) :91-97

[9]

Vaisblat A.V., 1987, KOMMUTATSIONNYE USTR

[10]

White J.F., 1982, MICROWAVE SEMICONDUC

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