INTEGRATED DFB DBR LASER MODULATOR GROWN BY SELECTIVE-AREA METALORGANIC VAPOR-PHASE EPITAXY GROWTH TECHNIQUE

被引：17

作者：

TANBUNEK, T ^{[1
]}

CHEN, YK ^{[1
]}

GRENKO, JA ^{[1
]}

BYRNE, EK ^{[1
]}

JOHNSON, JE ^{[1
]}

LOGAN, RA ^{[1
]}

TATE, A ^{[1
]}

SERGENT, AM ^{[1
]}

WECHT, KW ^{[1
]}

SCIORTINE, PF ^{[1
]}

CHU, SNG ^{[1
]}

机构：

[1] AT&T MICROELECTR,READING,PA 19612

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 145卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)91161-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A device quality of selective epitaxy growth of InGaAsP/InP multiple quantum well (MQW) structure using low-pressure metalorganic vapor phase epitaxy (MOVPE) technique is described. The technique is applied to a monolithically integrated electroabsorption modulator with distributed feedback (DFB) and distributed Bragg reflector (DBR) lasers. Superior device characteristics such as efficient modulation, low threshold current and high efficiency operation of the integrated devices are obtained.

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页码：902 / 906

页数：5

相关论文

共 13 条

[1] NOVEL STRUCTURE MQW ELECTROABSORPTION MODULATOR DFB-LASER INTEGRATED DEVICE FABRICATED BY SELECTIVE AREA MOCVD GROWTH [J].

AOKI, M ;

SANO, H ;

SUZUKI, M ;

TAKAHASHI, M ;

UOMI, K ;

TAKAI, A .

ELECTRONICS LETTERS, 1991, 27 (23) :2138-2140

[2] LATERAL AND LONGITUDINAL PATTERNING OF SEMICONDUCTOR STRUCTURES BY CRYSTAL-GROWTH ON NONPLANAR AND DIELECTRIC-MASKED GAAS SUBSTRATES - APPLICATION TO THICKNESS-MODULATED WAVE-GUIDE STRUCTURES [J].

COLAS, E ;

SHAHAR, A ;

SOOLE, BD ;

TOMLINSON, WJ ;

HAYES, JR ;

CANEAU, C ;

BHAT, R .

JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) :226-230

[3] COMPOSITION OF SELECTIVELY GROWN INXGA1-XAS STRUCTURES FROM LOCALLY RESOLVED RAMAN-SPECTROSCOPY [J].

FINDERS, J ;

GEURTS, J ;

KOHL, A ;

WEYERS, M ;

OPITZ, B ;

KAYSER, O ;

BALK, P .

JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) :151-155

[4] SELECTIVE AREA MOVPE OF GAINAS/INP HETEROSTRUCTURES ON MASKED AND NONPLANAR (100) AND (111) SUBSTRATES [J].

GALEUCHET, YD ;

ROENTGEN, P .

JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) :147-150

[5] PRESERVING INP SURFACE CORRUGATIONS FOR 1.3-MU-M GAINASP-INP DFB LASERS FROM THERMAL DEFORMATION DURING LPE PROCESS [J].

KINOSHITA, J ;

OKUDA, H ;

UEMATSU, Y .

ELECTRONICS LETTERS, 1983, 19 (06) :215-216

[6] SEMICONDUCTOR PHOTONIC INTEGRATED-CIRCUITS [J].

KOCH, TL ;

KOREN, U .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (03) :641-653

[7] A NOVEL TECHNIQUE FOR GALNASP/INP BURIED HETEROSTRUCTURE LASER FABRICATION [J].

LIAU, ZL ;

WALPOLE, JN .

APPLIED PHYSICS LETTERS, 1982, 40 (07) :568-570

[8]

LIAU ZL, 1985, APPL PHYS LETT, V46, P116

[9] REPRODUCIBLE GROWTH OF NARROW LINEWIDTH MULTIPLE QUANTUM-WELL GRADED INDEX SEPARATE CONFINEMENT DISTRIBUTED FEEDBACK (MQW-GRIN-SCH-DFB) LASERS BY MOVPE [J].

TANBUNEK, T ;

LOGAN, RA ;

TEMKIN, H ;

OLSSON, NA ;

WU, MC ;

SERGENT, AM ;

WECHT, KW .

JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) :751-756

[10] STATIC CHARACTERISTICS OF 1.5-1.6 MU-M GAINASP-INP BURIED HETEROSTRUCTURE BUTT-JOINTED BUILT-IN INTEGRATED LASERS [J].

TANBUNEK, T ;

SUZAKI, S ;

MIN, WS ;

SUEMATSU, Y ;

KOYAMA, F ;

ARAI, S .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (02) :131-140